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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10074571 B1

PDFFull Text
Date of Patent:
Sep. 11, 2018

Filed:

Mar. 07, 2017

Device with decreased pitch contact to active regions

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Brian J. Greene, Wappingers Falls, NY (US);

Shreesh Narasimha, Beacon, NY (US);

Scott R. Stiffler, Sharon, CT (US);

Assignee:

GLOBALFOUNDRIES INC., Grandy Cayman, KY;

Attorneys:

Scully Scott Murphy and Presser

Frank Digiglio

Primary Examiner:

Jami M Valentine

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/76224 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01);
Abstract

A fin cut process cuts semiconductor fins after forming sacrificial gate structures that overlie portions of the fins. Selected gate structures are removed to form openings and exposed portions of the fins within the openings are etched. An isolation dielectric layer is deposited into the openings and between end portions of the cut fins. The process enables a single sacrificial gate structure to define the spacing between two active regions on dissimilar electrical nets.

Find Patent Forward Citations

Greene, Brian. (2018). Device with decreased pitch contact to active regions (U.S. Patent No. 10074571). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10074571

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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