The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
Apr. 17, 2015
1366 Technologies, Inc., Bedford, MA (US);
Emanuel M. Sachs, Newton, MA (US);
Ralf Jonczyk, Concord, MA (US);
Adam L. Lorenz, Arlington, MA (US);
Richard L. Wallace, Acton, MA (US);
G. D. Stephen Hudelson, Lexington, MA (US);
1366 Technologies, Inc., Bedford, MA (US);
Abstract
Semi-conductor wafers with thin and thicker regions at controlled locations may be for Photovoltaics. The interior may be less than 180 microns or thinner, to 50 microns, with a thicker portion, at 180-250 microns. Thin wafers have higher efficiency. A thicker perimeter provides handling strength. Thicker stripes, landings and islands are for metallization coupling. Wafers may be made directly from a melt upon a template with regions of different heat extraction propensity arranged to correspond to locations of relative thicknesses. Interstitial oxygen is less than 6×10atoms/cc, preferably less than 2×10, total oxygen less than 8.75×10atoms/cc, preferably less than 5.25×10. Thicker regions form adjacent template regions having relatively higher heat extraction propensity; thinner regions adjacent regions with lesser extraction propensity. Thicker template regions have higher extraction propensity. Functional materials upon the template also have differing extraction propensities.