The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
May. 18, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Chin-Sheng Yang, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 21/8258 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 21/845 (2013.01); H01L 27/0688 (2013.01); H01L 27/1225 (2013.01); H01L 21/8258 (2013.01); H01L 27/092 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/7842 (2013.01);
Abstract
A semiconductor device and a method of forming the same, the semiconductor device includes a first transistor and a second transistor. The first transistor is disposed on a substrate and comprises a gate electrode, a gate dielectric layer and a first source/drain. The second transistor includes the gate electrode and a channel layer disposed on the gate electrode.