The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Feb. 21, 2017
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Chin Yang, Tainan, TW;
Chao-Sheng Cheng, Taichung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/823437 (2013.01); H01L 29/42356 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/7801 (2013.01);
Abstract
A semiconductor device includes a substrate having a high-voltage (HV) region; HV gate structures formed in the HV region of the substrate; a HV dummy pattern disposed in the HV region, and the HV dummy pattern comprising at least a semiconductor portion and a dummy HM stack disposed on the semiconductor portion, wherein a height (h) of the semiconductor portion of the HV dummy pattern is smaller than a height (h) of a HV gate electrode of one of the HV gate structures.