The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Jan. 09, 2015
Applicant:
Sunedison Semiconductor Limited (Uen201334164h), Singapore, SG;
Inventors:
Michael J. Ries, St. Charles, MO (US);
Jeffrey Louis Libbert, O'Fallon, MO (US);
Charles R. Lottes, Ballwin, MO (US);
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/46 (2006.01); H01L 21/00 (2006.01); H01L 21/762 (2006.01); H01L 23/00 (2006.01); H01L 21/04 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 24/83 (2013.01); H01L 21/0455 (2013.01); H01L 21/2253 (2013.01); H01L 21/2258 (2013.01); H01L 21/265 (2013.01); H01L 2224/83054 (2013.01); H01L 2224/83085 (2013.01); H01L 2224/83236 (2013.01); H01L 2224/83893 (2013.01);
Abstract
Methods for preparing layered semiconductor structures are disclosed. The methods may involve pretreating an ion-implanted donor wafer by annealing the ion-implanted donor wafer to cause a portion of the ions to out-diffuse prior to wafer bonding. The donor structure may be bonded to a handle structure and cleaved without re-implanting ions into the donor structure.