The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Jun. 05, 2017
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Chin-Chia Kuo, Tainan, TW;

Ming-Hua Tsai, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 21/311 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/28273 (2013.01); H01L 21/311 (2013.01); H01L 21/76283 (2013.01); H01L 21/76802 (2013.01); H01L 21/76834 (2013.01); H01L 29/0649 (2013.01);
Abstract

A semiconductor structure including a substrate, an isolation structure, a first gate structure, a second gate structure and a protection layer is provided. The isolation structure is disposed on the substrate. The first gate structure and the second gate structure are adjacent to each other and disposed on the isolation structure. Each of the first gate structure and the second gate structure includes a conductive layer. The protection layer is disposed between the first gate structure and the second gate structure and covers the isolation structure between the first gate structure and the second gate structure.


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