The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Jan. 04, 2017
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;
Abstract
Providing a manufacture method of a gate insulating film formed on an SiC substrate having thereon an SiON film, achieving both of the maintenance of an SiON film structure and the formation of a high-quality insulating film. A manufacture method of a gate insulating film for an SiC semiconductor device comprises preparing a transfer plate comprising a transfer substrate and an insulating film formed thereon; preparing a surface-processed substrate comprising an SiC substrate and an epitaxial silicon oxynitride film as an atomic monolayer formed thereon; and transferring the insulating film from the transfer plate onto the silicon oxynitride film of the surface-processed substrate to produce the surface-processed substrate having a transferred insulating film.