The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Apr. 20, 2017
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Masashi Oya, Tokyo, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 17/16 (2006.01); G11C 11/4076 (2006.01); G11C 29/12 (2006.01);
U.S. Cl.
CPC ...
G11C 29/78 (2013.01); G11C 11/4076 (2013.01); G11C 17/16 (2013.01); G11C 29/12 (2013.01); G11C 29/785 (2013.01); G11C 29/835 (2013.01);
Abstract
A semiconductor device that includes a plurality of memory cells assigned with addresses that are different from each other, a redundant memory cell replacing a defective memory cell among the memory cells, a fuse circuit storing an address of the defective memory cell, an access control circuit accessing the redundant memory cell when the address of the defective memory cell stored in the fuse circuit is supplied, and a roll call circuit outputting the address of the defective memory cell to outside the semiconductor device in a serial manner.