The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Aug. 29, 2017
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Zhenlei Shen, Boise, ID (US);

William H. Radke, Los Gatos, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/34 (2013.01); G11C 11/5621 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/3404 (2013.01); G11C 16/3418 (2013.01);
Abstract

Apparatuses and methods for inferring threshold voltage distributions associated with memory cells via interpolation are described herein. A number of embodiments include determining soft data for a group of memory cells each programmed to one of a number of data states, wherein the soft data comprises a number of different soft data values, determining a quantity of memory cells associated with each of the different soft data values, and inferring at least a portion of a threshold voltage distribution associated with the group of memory cells via an interpolation process using the determined quantities of memory cells associated with each of the different soft data values.


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