The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Dec. 01, 2016
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Chengwei Tang, Shanghai, CN;
Abstract
A band-gap reference circuit including: mirror current branch circuits, band-gap paths, and an operational amplifier. Each mirror current branch circuit includes a mirror PMOS transistor and an auxiliary PMOS transistor. A drain of each mirror PMOS transistor is connected with a source of a corresponding auxiliary PMOS transistor, and a drain of said each auxiliary PMOS transistor is connected to a top end of a corresponding band-gap path, each gate of each mirror PMOS transistor is connected with an output port of the operational amplifier. A gate of each auxiliary PMOS transistor is connected to a first bias voltage. A substrate electrode of each mirror and auxiliary transistor is all connected to a source voltage. The output port of the operational amplifier outputs a high level less than the source voltage, the first bias voltage is less than an output voltage signal of the operational amplifier.