The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Feb. 08, 2016
Crytur, Spol. S R.o., Turnov, CZ;
Fyzikální Ústav Av Ĉr, V.v.i., Prague, CZ;
Alice Hospodková, Prague, CZ;
Karel Bla{circumflex over (z)}ek, Turnov, CZ;
Eduard Hulicius, Prague, CZ;
Jan Touŝ, Turnov, CZ;
Martin Nikl, Prague, CZ;
CRYTUR, SPOL. S R.O., Turnov, CZ;
FYZIKÁLNÍ ÚSTAV AV CR, V.V.I., Prague, CZ;
Abstract
A scintillation detector for detecting ionizing radiation, which comprises: a monocrystalline substrate layer; at least one bottom nitride semiconductor layer; an active area on top of the nitride bottom semiconductor layer, which comprises a plurality of alternating nitride semiconductor layers of substantially the same polarization, each couple of the alternating layers consists of a barrier layer of a AlInGaN type and a potential well layer of a AlInGaN type for radiant recombinations of electrons and holes, where xb≤xw and yb≤yw is valid; at least one top nitride semiconductor layer on top of the active area; and at least one GaN buffer layer for binding with epitaxy on top of said monocrystalline substrate a structure which comprises: the bottom nitride semiconductor layer; the alternating layers of the active area; and the top nitride semiconductor layer; each of the nitride semiconductor layers has the general formula of AlInGaN.