The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Jul. 14, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
An-Dih Yu, New Taipei, TW;
Chi-Ming Yang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); B44C 1/22 (2006.01); C23F 1/00 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C09G 1/02 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01); C09G 1/00 (2006.01); C09K 3/14 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); C09G 1/00 (2013.01); C09K 3/14 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01);
Abstract
The present disclosure provides chemical mechanical polishing (CMP) slurry, including an abrasive, a chelator, an oxidizing agent, and a surface modificator. The surface modificator is configured to modify a surface from hydrophobic to hydrophilic. The present disclosure also provides a method for reducing chemical mechanical polishing (CMP) surface defects. The method includes adding an additive into CMP slurry by at least 0.0001 wt %, wherein the additive modifies a surface to be polished from hydrophobic to hydrophilic.