The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Jan. 17, 2017
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Bo Hong, Shanghai, CN;
Shuai Zhang, Shanghai, CN;
Abstract
Memory cells and fabrication methods thereof are provided. An exemplary method includes providing a substrate having a well region; forming a select gate structure, a floating gate structure and a dummy gate structure on a surface of the well region; forming a first lightly doped region, a second lightly doped region and a third lightly doped region in the well region, the first lightly doped region and the second lightly doped region being at two sides of the select gate structure respectively, the second lightly doped region being in between the select gate structure and the floating gate structure, and the third lightly doped region being in between the floating gate structure and the dummy gate structure; and forming bit line region in the first lightly doped region and a source region in the third lightly doped region, the source region being enclosed by the third lightly doped region.