The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Nov. 09, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yu-Wei Ting, Taipei, TW;
Chi-Wen Liu, Hsinchu, TW;
Chun-Yang Tsai, Hsinchu, TW;
Kuo-Ching Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
Some embodiments of the present disclosure relate to an integrated chip having a vertical transistor device. The integrated chip may have a semiconductor body with a trench extending along first sides of a source region, a channel region over the source region, and a drain region over the channel region. A gate electrode is arranged along a first sidewall of the trench, and a metal contact is arranged on the drain region. An isolation dielectric material is disposed within the trench. The isolation dielectric material is vertically over a top surface of the gate electrode and is laterally adjacent to the gate electrode.