The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Apr. 13, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11568 (2017.01); H01L 27/11573 (2017.01); H01L 21/02 (2006.01); H01L 29/51 (2006.01); H01L 29/792 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 27/11573 (2013.01); H01L 29/518 (2013.01); H01L 29/66553 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract
A method of manufacturing a flash memory includes providing a substrate, a memory gate on the substrate, a hard mask on the memory gate, a spacer on a sidewall of the memory gate, and a select gate disposed on a sidewall of the spacer. A first silicon oxide layer is formed to conformally cover the memory gate, the hard mask, the spacer, and the select gate. A thickness of the first silicon oxide layer is smaller than 0.54 of a thickness of the hard mask. Later, the first silicon oxide layer is thinned by a dry etching process. After that, the first silicon oxide layer and the hard mask are entirely removed by a wet etching process.