The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Nov. 24, 2016
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Wanxun He, Singapore, SG;

Su Xing, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); G11C 11/412 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); G11C 11/412 (2013.01); G11C 11/419 (2013.01); G11C 11/4125 (2013.01); H01L 27/1116 (2013.01);
Abstract

The present invention provides a SRAM unit cell which includes a semiconductor substrate, six transistors, a first well, two first doped regions and two second doped regions. The transistors are disposed on the semiconductor substrate, and include a first gate line and a second gate line. The first well is disposed in the semiconductor substrate, and the first well has a first conductive type, wherein the first gate line and the second gate line extend onto the first well. The first doped regions are disposed in the first well at two sides of the first gate line, and the second doped regions are disposed in the first well at two sides of the second gate line.


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