The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Nov. 25, 2015
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Pengfei Guo, Singapore, SG;

Shyue Seng Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/105 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/105 (2013.01); H01L 27/0207 (2013.01);
Abstract

Multi-time programmable (MTP) memory cells, integrated circuits including MTP memory cells, and methods for fabricating MTP memory cells are provided. In an embodiment, an MTP memory cell includes a semiconductor substrate, a p-well formed in the semiconductor substrate, and an n-well formed in the semiconductor substrate and isolated from the p-well. The MTP memory cell further includes a p-channel transistor disposed over the n-well and including a transistor gate. Also, the MTP memory cell includes a p-channel capacitor disposed over the p-well and including a capacitor gate. The capacitor gate is coupled to the transistor gate.


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