The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
May. 03, 2017
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Toshihiko Ochiai, Kawasaki, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/58 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 23/585 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/53228 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/06181 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06565 (2013.01);
Abstract
A semiconductor device includes a TSV that penetrates a silicon substrate. A seal ring is provided from a first low relative permittivity film that is closest to the silicon substrate to a second low relative permittivity film that is farthest from the silicon substrate. The seal ring is formed to surround the TSV in bird's eye view on the silicon substrate from a wafer front surface. This achieves suppression of generation or progress of a crack in a low relative permittivity film in a semiconductor device including the low relative permittivity film and a TSV.