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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10062562 B1

PDFFull Text
Date of Patent:
Aug. 28, 2018

Filed:

Jan. 29, 2016

Method of manufacturing semiconductor device, substrate processing apparatus and recording medium

Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Takaaki Noda, Toyama, JP;

Kotaro Konno, Toyama, JP;

Assignee:

HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;

Attorney:

Volpe and Koenig, P.C.

Primary Examiner:

Dale E Page

Assistant Examiner:

Quovaunda V Jefferson

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); C23C 16/46 (2006.01); C23C 16/52 (2006.01); H01L 21/67 (2006.01); C23C 16/30 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); C23C 16/30 (2013.01); C23C 16/4408 (2013.01); C23C 16/4584 (2013.01); C23C 16/45531 (2013.01); C23C 16/45534 (2013.01); C23C 16/45546 (2013.01); C23C 16/45578 (2013.01); C23C 16/46 (2013.01); C23C 16/52 (2013.01); H01L 21/0214 (2013.01); H01L 21/02112 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02175 (2013.01); H01L 21/02211 (2013.01); H01L 21/67109 (2013.01); H01L 21/67248 (2013.01);
Abstract

According to the present invention, when a film is formed on a substrate, a film-forming rate or film quality is stabilized. There is provided a method of manufacturing a semiconductor device, including: (a) forming a film on a substrate by supplying at least a gas including hydroxyl group to the substrate in a process chamber while maintaining a temperature of an inside of the process chamber at a first temperature; (b) changing the temperature of the inside of the process chamber from the first temperature to a second temperature higher than the first temperature; and (c) maintaining the temperature of the inside of the process chamber at the second temperature at least in a state that the substrate is not in the process chamber.

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