The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Jul. 08, 2016
Applicant:
Sunedison Semiconductor Limited (Uen201334164h), Singapore, SG;
Inventor:
John F. Valley, Lake Oswego, OR (US);
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06K 9/00 (2006.01); G06T 7/00 (2017.01); G06T 7/60 (2017.01); G06T 5/10 (2006.01); G06T 5/20 (2006.01);
U.S. Cl.
CPC ...
G06T 7/0006 (2013.01); G06T 5/10 (2013.01); G06T 5/20 (2013.01); G06T 7/60 (2013.01); G06T 2207/30148 (2013.01);
Abstract
A method for lithography nanotopography metrology is provided. The method includes receiving wafer thickness data for a plurality of wafers and applying an elongated filter to the wafer thickness data to produce a filtered thickness map for each of the plurality of wafers. The filter has a first cutoff wavelength in the x-direction and a second cutoff wavelength in the y-direction. The method further includes generating a report including at least one wafer metric associated with the filtered thickness map.