The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Aug. 13, 2015
Industry-university Cooperation Foundation Hanyang University (Iucf-hyu), Seoul, KR;
Jung Sik Kim, Seongnam-si, KR;
Jinho Ahn, Seoul, KR;
Seongchul Hong, Seoul, KR;
Hyun Min Song, Uiwang-si, KR;
Jae Uk Lee, Yangsan-si, KR;
Seung Min Lee, Busan, KR;
Jung Hwan Kim, Seoul, KR;
Abstract
A mask for an extreme ultraviolet (EUV) lithography process is provided. The mask includes a substrate, a reflection layer including first material layers and second material layers which are alternately and repeatedly stacked on the substrate, a capping layer on the reflection layer, and a phase shift layer and an absorber layer sequentially stacked on the capping layer. Sidewalls of the phase shift layer and the absorber layer may be oblique to a top surface of the capping layer.