The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Dec. 21, 2016
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Ta-Ching Hsiao, Zhudong Township, TW;

Wen-Po Tu, Zhudong Township, TW;

Chu-Pi Jeng, Hsinchu, TW;

Mu-Hsi Sung, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/573 (2006.01); C04B 35/628 (2006.01); C04B 35/626 (2006.01); C01B 31/36 (2006.01); C30B 23/00 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C04B 35/573 (2013.01); C01B 31/36 (2013.01); C04B 35/6267 (2013.01); C04B 35/62839 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/656 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6584 (2013.01); C30B 23/00 (2013.01); C30B 29/36 (2013.01);
Abstract

A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.


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