The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Aug. 21, 2012
Applicants:

Jerome Chandra Bhat, Palo Alto, CA (US);

Daniel Alexander Steigerwald, Cupertino, CA (US);

Michael David Camras, Sunnyvale, CA (US);

Han Ho Choi, Sunnyvale, CA (US);

Nathan Fredrick Gardner, Sunnyvale, CA (US);

Oleg Borisovich Shchekin, San Francisco, CA (US);

Inventors:

Jerome Chandra Bhat, Palo Alto, CA (US);

Daniel Alexander Steigerwald, Cupertino, CA (US);

Michael David Camras, Sunnyvale, CA (US);

Han Ho Choi, Sunnyvale, CA (US);

Nathan Fredrick Gardner, Sunnyvale, CA (US);

Oleg Borisovich Shchekin, San Francisco, CA (US);

Assignee:

Lumileds LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); H01L 33/00 (2010.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 33/507 (2013.01); H01L 22/24 (2013.01); H01L 33/0079 (2013.01); H01L 33/0095 (2013.01); H01L 33/501 (2013.01); H01L 2933/0041 (2013.01);
Abstract

A method according to embodiments of the invention includes providing a wafer including a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into multiple light emitting devices.


Find Patent Forward Citations

Loading…