The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Dec. 25, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Zhibiao Zhou, Singapore, SG;
Ding-Lung Chen, Singapore, SG;
Chen-Bin Lin, Taipei, TW;
Sanpo Wang, Singapore, SG;
Chung-Yuan Lee, Taoyuan, TW;
Chi-Fa Ku, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78609 (2013.01); H01L 29/788 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H01L 29/792 (2013.01);
Abstract
A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a first dielectric layer covering on the oxide-semiconductor layer and the source/drain regions, a second gate between the two source/drain regions and partially covering the oxide-semiconductor layer, and a charge storage structure between the first gate electrode and the oxide-semiconductor layer.