The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Oct. 09, 2015
Applicant:
Nexperia B.v., Nijmegen, NL;
Inventors:
Assignee:
Nexperia B.V., Nijmegen, NL;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/40 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 21/02255 (2013.01); H01L 21/02271 (2013.01); H01L 21/28017 (2013.01); H01L 21/31051 (2013.01); H01L 21/32115 (2013.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H01L 29/7813 (2013.01); H01L 29/861 (2013.01);
Abstract
A semiconductor arrangement comprising a substrate having a first trench formed therein, a field plate layer arranged to extend within the first trench and coat the first trench, the field plate layer having a thickness such that it defines a second trench within the first trench, a barrier layer arranged to coat an internal surface of the second trench; and a trench fill material configured to substantially planarize the first and second trenches.