The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Mar. 04, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsiang-Ku Shen, Hsinchu, TW;
Yu-Lien Huang, Hsinchu, TW;
Wilson Huang, Hsinchu, TW;
Janet Chen, Hsinchu, TW;
Jeng-Ya David Yeh, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsinchu, TW;
Abstract
A semiconductor device includes a first gate structure disposed on a substrate. The first gate structure includes a first gate electrode, a first cap insulating layer disposed over the first gate electrode and first sidewall spacers disposed on both side faces of the first gate electrode and the first cap insulating layer. The semiconductor device further includes a first protective layer formed over the first cap insulating layer and at least one of the first sidewall spacers. The first protective layer includes at least one selected from the group consisting of AlON, AlN and amorphous silicon.