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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10056369 B1

PDFFull Text
Date of Patent:
Aug. 21, 2018

Filed:

Feb. 07, 2018

Semiconductor device including buried capacitive structures and a method of forming the same

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Peter Baars, Dresden, DE;

Frank Jakubowski, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:

Amerson Law Firm, PLLC

Primary Examiner:

Nicholas Tobergte

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/06 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 21/84 (2006.01); H01L 21/762 (2006.01); H01L 49/02 (2006.01); H01L 29/49 (2006.01); H01L 23/31 (2006.01); H01L 29/417 (2006.01); H01L 23/535 (2006.01); H01L 29/06 (2006.01); H01L 27/12 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/32115 (2013.01); H01L 21/32133 (2013.01); H01L 21/76283 (2013.01); H01L 21/84 (2013.01); H01L 23/3178 (2013.01); H01L 23/535 (2013.01); H01L 28/60 (2013.01); H01L 29/0649 (2013.01); H01L 29/41783 (2013.01); H01L 29/495 (2013.01); H01L 29/4916 (2013.01); H01L 27/108 (2013.01); H01L 27/1203 (2013.01);
Abstract

A method includes forming a plurality of openings extending through a semiconductor layer, through a buried insulating layer, and into a substrate material in a second device region of a semiconductor device while covering a first device region of the semiconductor device. An insulating material is formed on sidewalls and on a bottom face of each of the plurality of openings, and a first capacitor electrode is formed in each of the plurality of openings in the presence of the insulating material, wherein each of the first capacitor electrodes includes a conductive material and partially fills a respective one of the plurality of openings.

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