The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Oct. 15, 2015
Applicants:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Centre National DE LA Recherche Scientifique (Cnrs), Paris, FR;

Universite Grenoble Alpes, Grenoble, FR;

Inventors:

Bernard Dieny, Lans en Vercors, FR;

Maxime Darnon, Pavezin, FR;

Gabriele Navarro, Grenoble, FR;

Olivier Joubert, Meylan, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); C23C 14/34 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4763 (2013.01); C23C 14/3407 (2013.01); H01L 27/22 (2013.01); H01L 27/24 (2013.01); H01L 27/222 (2013.01); H01L 27/2463 (2013.01); H01L 45/00 (2013.01); H01L 45/06 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/16 (2013.01);
Abstract

A method for manufacturing a resistive device, includes depositing a first electrically conductive layer on a substrate; forming an etching mask on the first conductive layer; etching the first conductive layer through the mask, such as to obtain a plurality of electrically conductive pillars separated from one another; and forming storage elements with variable electrical resistance at the tops of the electrically conductive pillars, such that each storage element is supported by one of the electrically conductive pillars, the step of forming the storage elements including the following operations depositing a first layer by non-collimated cathode sputtering at normal incidence relative to the substrate; and depositing a second layer on the first layer by cathode sputtering, the second layer including a first chemical species sputtered at an oblique incidence.


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