The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Aug. 25, 2017
Sumitomo Electric Device Innovations, Inc., Yokohama, Kanagawa, JP;
Tadashi Watanabe, Kanagawa, JP;
Hajime Matsuda, Kanagawa, JP;
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., Kanagawa, JP;
Abstract
A process of forming a semiconductor device by use of a MOCVD technique is disclosed. The semiconductor device, which is made of primarily nitride semiconductor materials, includes a GaN channel layer, an AlGaN barrier layer, and a GaN cap layer on a substrate. The barrier layer and the cap layer are grown under a gradient temperature condition where the upstream side of the substrate with respect to the flow of the MOCVD source gases is at a higher temperature as compared with the temperature at the downstream side of the substrate with respect to the flow of the source gases.