The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Apr. 26, 2017
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Kotaro Horikoshi, Hitachinaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32697 (2013.01); H01J 37/32715 (2013.01); H01J 37/32788 (2013.01); H01L 21/67069 (2013.01); H01L 21/6831 (2013.01); H01L 21/68707 (2013.01); H01L 21/68742 (2013.01); H01J 2237/0206 (2013.01); H01J 2237/18 (2013.01); H01J 2237/334 (2013.01);
Abstract

A manufacturing method of a semiconductor device includes the steps of: (a) placing a semiconductor wafer over a stage provided in a chamber, the pressure in the inside of which is reduced by vacuum pumping; and (b) after the step (a), forming plasma in the chamber in a state where the semiconductor wafer is adsorbed and held by the stage, so that desired etching processing is performed on the semiconductor wafer. Herein, before the step (a), Ogas, negative gas having an electronegativity higher than that of nitrogen gas, is introduced into the chamber to form Oplasma in the chamber, thereby allowing the charges remaining over the stage to be eliminated.


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