The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Feb. 27, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/20 (2006.01); H01J 37/317 (2006.01); B29C 67/00 (2017.01); G03F 7/20 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3174 (2013.01); B29C 67/0051 (2013.01); G03F 7/0035 (2013.01); G03F 7/70991 (2013.01); G03F 2007/2067 (2013.01); H01J 2237/004 (2013.01); H01J 2237/0245 (2013.01); H01J 2237/31755 (2013.01); H01J 2237/31788 (2013.01);
Abstract
A charged-particle beam exposure method includes providing a sample that has patterns having shot densities different from each other, using the sample to obtain pattern drift values correlated with the shot densities, and irradiating the sample with a charged-particle beam to perform an exposure process on the sample. The irradiating of the sample with the charged-particle beam is carried out while a deflection voltage, which is applied to the charged-particle beam to deflect the charged-particle beam, is corrected based on the pattern drift value corresponding to a shot density of a pattern to be formed on the sample.