The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Jun. 05, 2017
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Mase J. Taub, Folsom, CA (US);

Sandeep K. Guliani, Folsom, CA (US);

Kiran Pangal, Fremont, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 5/02 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0004 (2013.01); G11C 5/02 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0076 (2013.01); G11C 2013/0078 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/77 (2013.01);
Abstract

A system and technique is disclosed for writing data in a cross-point memory. The state of one or more memory cells of the cross-point memory are sensed and then are continued to be selected and left on. It is then determined which of the one or more memory cells are to change state based on incoming user data that is to be written into the one or more memory cells. The one or more memory cells determined to change state and are still selected to be on are then written by applying a write-current pulse to the memory cells. In one exemplary embodiment, the one or more memory cells comprise one or more phase-change-type memory cell devices.


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