The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Feb. 01, 2016
Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventors:

Toshihiko Takahata, Kariya, JP;

Eiichi Taketani, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); G01P 15/08 (2006.01); H01L 29/84 (2006.01); H01L 23/02 (2006.01);
U.S. Cl.
CPC ...
G01P 15/08 (2013.01); H01L 23/02 (2013.01); H01L 29/84 (2013.01);
Abstract

A method for manufacturing a semiconductor device includes: preparing a first substrate; forming a metal film having a Ti layer as the most outermost surface on one surface of the first substrate a metal film having a Ti layer as the outermost surface; patterning the metal film to form a first pad portion; preparing a second substrate; forming on one surface of the second substrate a metal film having a Ti layer as the outermost surface; patterning the metal film to form a second pad portion; vacuum annealing the first substrate and the second substrate to remove an oxide film formed on the Ti layer in the first pad portion and the second pad portion; and bonding the first pad portion and the second pad portion together.


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