The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Mar. 09, 2016
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Masahiro Kato, Takasaki, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
A method for evaluating a semiconductor wafer includes detecting semiconductor wafer LPDs as an examination sample in two measurement modes, performing size classification of the LPDs, calculating a distance between detection coordinates and a relative angle in the two measurement modes, presetting determination criteria to determine each LPD as a foreign matter or killer defect in accordance with each classified size, detecting semiconductor wafer LPDs as an evaluation target in the two measurement modes, performing size classification of the LPDs as the evaluation target, calculating a distance between detection coordinates and a relative angle of the evaluation target, and classifying the LPDs detected on a surface of the evaluation target into the killer defect and the foreign mater based on a result of the calculation and the determination criteria. The method enables classifying all LPDs from which quantitative size information cannot be provided, into the killer defect and foreign matter.