The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Jul. 24, 2014
Applicant:
Mitsubishi Materials Corporation, Tokyo, JP;
Inventors:
Assignee:
MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01K 7/22 (2006.01); C04B 35/581 (2006.01); C23C 14/34 (2006.01); H01C 7/04 (2006.01); H01C 17/12 (2006.01); C23C 14/06 (2006.01); C23C 14/58 (2006.01); C04B 35/58 (2006.01); C01B 21/06 (2006.01); C23C 14/00 (2006.01);
U.S. Cl.
CPC ...
G01K 7/22 (2013.01); C01B 21/0602 (2013.01); C04B 35/581 (2013.01); C04B 35/58007 (2013.01); C04B 35/58042 (2013.01); C23C 14/0641 (2013.01); C23C 14/0676 (2013.01); C23C 14/34 (2013.01); C23C 14/5826 (2013.01); H01C 7/04 (2013.01); H01C 7/041 (2013.01); H01C 17/12 (2013.01); C01P 2002/72 (2013.01); C01P 2004/04 (2013.01); C01P 2006/32 (2013.01); C04B 2235/40 (2013.01); C04B 2235/402 (2013.01); C04B 2235/404 (2013.01); C04B 2235/405 (2013.01); C04B 2235/407 (2013.01); C04B 2235/6584 (2013.01); C04B 2235/6585 (2013.01); C04B 2235/767 (2013.01); C04B 2235/81 (2013.01); C23C 14/0036 (2013.01);
Abstract
A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: MAl(NO)(where 'M' represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70≤y/(x+y)≤0.98, 0.45≤z≤0.55, 0<w≤0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al alloy sputtering target (where 'M' represents at least one of Fe, Co, Mn, Cu, and Ni).