The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Aug. 18, 2014
United Microelectronics Corp., Hsinchu, TW;
Man-Ling Lu, Taoyuan County, TW;
Yu-Hsiang Hung, Tainan, TW;
Chung-Fu Chang, Tainan, TW;
Yen-Liang Wu, Taipei, TW;
Wen-Jiun Shen, Yunlin County, TW;
Chia-Jong Liu, Pingtung County, TW;
Ssu-I Fu, Kaohsiung, TW;
Yi-Wei Chen, Taichung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second spacer material layer, and a third spacer material layer are sequentially formed on the substrate and cover the stacked structure. The first, second, and third spacer material layers are etched to form a tri-layer spacer structure on the sidewall of the stacked structure. The tri-layer spacer structure includes, from one side of the stacked structure, a first spacer, a second spacer, and a third spacer, and a dielectric constant of the second spacer is less than each of a dielectric constant of the first spacer and a dielectric constant of the third spacer.