The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10050105 B1

Date of Patent:

Aug. 14, 2018

Filed:

Nov. 29, 2016

Semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Tohru Shirakawa, Matsumoto, JP;

Tatsuya Naito, Matsumoto, JP;

Isamu Sugai, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:

Primary Examiner:

Michael Shingleton

Int. Cl.

CPC ...

H01L 29/49 (2006.01); H01L 29/06 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H02M 7/537 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01); H01L 21/266 (2006.01); H02M 7/00 (2006.01); H01L 21/8234 (2006.01);

U.S. Cl.

CPC ...

H01L 29/0634 (2013.01); H01L 21/2252 (2013.01); H01L 21/324 (2013.01); H01L 27/0629 (2013.01); H01L 27/088 (2013.01); H01L 29/0638 (2013.01); H01L 29/0834 (2013.01); H01L 29/1095 (2013.01); H01L 29/402 (2013.01); H01L 29/408 (2013.01); H01L 29/7397 (2013.01); H01L 29/7803 (2013.01); H01L 29/7805 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H02M 7/537 (2013.01); H01L 21/2253 (2013.01); H01L 21/266 (2013.01); H01L 21/823418 (2013.01); H01L 21/823487 (2013.01); H02M 7/003 (2013.01);

Abstract

To provide an optimal structure for electrically connecting an MOSFET region, a FWD region, and an IGBT region in parallel within one semiconductor chip by mitigating electric field concentration between a SJ column and a drift region, a semiconductor device is provided, the semiconductor device including: a semiconductor substrate: a super junction MOSFET having a repetitive structure of a first column and a second column; a parallel device having a drift region including second conductivity-type impurities, and being provided separately from the super junction MOSFET in the semiconductor substrate; and a boundary portion located between the super junction MOSFET and the parallel device in the semiconductor substrate, wherein the boundary portion extends from one main surface side to the other main surface side, and has at least one third column having first conductivity-type impurities, and the third column is shallower than the first column and the second column.

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