The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Aug. 16, 2017
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/06 (2006.01); H01L 43/04 (2006.01); H01L 43/14 (2006.01); G01R 33/07 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/22 (2013.01); G01R 33/072 (2013.01); H01L 21/762 (2013.01); H01L 43/04 (2013.01); H01L 43/065 (2013.01); H01L 43/14 (2013.01);
Abstract
A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a shallow trench isolation (STI) region and a deep trench isolation (DTI) region in a substrate; forming a p-type well in the substrate surrounded by the STI region in top view; forming a first n-type well and a second n-type well surrounded by the p-type well and DTI region in top view; forming n-type dopant in the first n-type well and the second n-type well; and forming p-type dopant in the p-type well.