The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2018

Filed:

Mar. 22, 2017
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Ting-Feng Liao, New Taipei, TW;

I-Ting Lin, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 27/11568 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01);
Abstract

A memory device includes memory includes a multi-layers stack includes a plurality of insulating layers and a plurality conductive layers alternatively stacked on a semiconductor device, a plurality of memory cells formed on the conductive layers, a contact plug passing through the insulating layers and the conductive layers, and a dielectric layer including a plurality of extending parts each of which is inserted between each adjacent two ones of the insulating layers to isolate the conductive layer from the contact plug, wherein any one of the extending parts that has a shorter distance departed from the semiconductor substrate has a size substantially greater than a size of the others that has a longer distance departed from the semiconductor substrate.


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