The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Nov. 08, 2013
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/11568 (2017.01); H01L 29/66 (2006.01); H01L 27/11573 (2017.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 29/66545 (2013.01); H01L 21/823842 (2013.01); H01L 29/42368 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01);
Abstract
A semiconductor device includes a substrate, at least one split gate memory device, and at least one logic device. The split gate memory device is disposed on the substrate. The logic device is disposed on the substrate. A select gate or a main gate of the split gate memory device and a logic gate of the logic device are both made of metal, and the other gate of the split gate memory device is made of nonmetal.