The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2018

Filed:

Aug. 10, 2016
Applicant:

Nexperia B.v., Nijmegen, NL;

Inventors:

Matthias Rose, Helmond, NL;

Jan Sonsky, Leuven, BE;

Assignee:

Nexperia B.V., Nijmegen, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/02 (2006.01); H01L 21/8236 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/872 (2006.01); H02M 3/158 (2006.01); H03K 17/687 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0883 (2013.01); H01L 21/8236 (2013.01); H01L 27/0255 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/872 (2013.01); H02M 3/158 (2013.01); H03K 17/6871 (2013.01); H01L 29/42316 (2013.01); H01L 29/513 (2013.01); H01L 29/778 (2013.01);
Abstract

A semiconductor device comprising: a die-source-terminal, a die-drain-terminal and a die-gate-terminal; a semiconductor-die; an insulated-gate-depletion-mode-transistor provided on the semiconductor-die, the insulated-gate-depletion-mode-transistor comprising a depletion-source-terminal, a depletion-drain-terminal and a depletion-gate-terminal, wherein the depletion-drain-terminal is coupled to the die-drain-terminal and the depletion-gate-terminal is coupled to the die-source-terminal; an enhancement-mode-transistor comprising an enhancement-source-terminal, an enhancement-drain-terminal and an enhancement-gate-terminal, wherein the enhancement-source-terminal is coupled to the die-source-terminal, the enhancement-gate-terminal is coupled to the die-gate-terminal and the enhancement-drain-terminal is coupled to the depletion-source-terminal; and a clamp-circuit coupled between the depletion-source-terminal and the depletion-gate-terminal.


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