The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
May. 22, 2015
Massachusetts Institute of Technology, Cambridge, MA (US);
Nanyang Technological University, Singapore, SG;
Kwang Hong Lee, Singapore, SG;
Chuan Seng Tan, Singapore, SG;
Yew Heng Tan, Singapore, SG;
Gang Yih Chong, Singapore, SG;
Eugene A. Fitzgerald, Cambridge, MA (US);
Shuyu Bao, Singapore, SG;
Massachusetts Institute of Technology, Cambridge, MA (US);
Nanyang Technological University, Singapore, SG;
Abstract
A method of manufacturing a germanium-on-insulator substrate is disclosed. The method comprises: providing () a first semiconductor substrate, and a second semiconductor substrate formed with a germanium layer; bonding () the first semiconductor substrate to the second semiconductor substrate using at least one dielectric material to form a combined substrate, the germanium layer being arranged intermediate the first and second semiconductor substrates; removing () the second semiconductor substrate from the combined substrate to expose at least a portion of the germanium layer with misfit dislocations; and annealing () the combined substrate to enable removal of the misfit dislocations from the portion of the germanium layer.