The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Sep. 09, 2016
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chung-Yen Chou, Hsinchu, TW;
Chih-Jen Chan, Changhua County, TW;
Shih-Chang Liu, Kaohsiung County, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
The present disclosure provides a semiconductor structure, comprising a substrate, dielectric layers and conductive layers. A first dielectric layer is disposed on a bottom surface and sidewall surfaces of a filled trench of the substrate. A first conductive layer is disposed on the first dielectric layer and has a first surface in the filled trench and a second surface above the substrate. A second dielectric layer is disposed on the first conductive layer. A second conductive layer is disposed on the second dielectric layer and has a first surface in the filled trench and a second surface above the substrate. A third dielectric layer is disposed on the second conductive layer. A third conductive layer is disposed in the filled trench and on the third dielectric layer. A top surface of the third conductive layer is lower than the second surface of the second conductive layer.