The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Sep. 02, 2016
Applied Materials, Inc., Santa Clara, CA (US);
Shuran Sheng, Saratoga, CA (US);
Su Ho Cho, Santa Clara, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
The present disclosure generally relates to an improved method for forming low resistivity crystalline silicon films for display devices. The processing chamber in which the low resistivity crystalline silicon film is formed is pressurized to a predetermined pressure and a radio frequency power at a predetermined power level is delivered to the processing chamber. In addition, feeding locations of one or more VHF power generator and controlling of each VHF power generator via phase modulation and sweeping allows for plasma uniformity improvements by compensating for the non-uniformity of the thin film patterns produced by the chamber, due to the standing wave effect. Diffuser plate having two curved surfaces helps improve crystallinity uniformity.