The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

May. 25, 2016
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Duli Mao, Sunnyvale, CA (US);

Trygve Willassen, Oppegaard, NO;

Johannes Solhusvik, Haslum, NO;

Keiji Mabuchi, Los Altos, CA (US);

Gang Chen, San Jose, CA (US);

Sohei Manabe, San Jose, CA (US);

Dyson H. Tai, San Jose, CA (US);

Bill Phan, San Jose, CA (US);

Oray Orkun Cellek, Mountain View, CA (US);

Zhiqiang Lin, San Jose, CA (US);

Siguang Ma, Mountain View, CA (US);

Dajiang Yang, San Jose, CA (US);

Boyd Albert Fowler, Sunnyvale, CA (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/374 (2011.01); H04N 5/232 (2006.01);
U.S. Cl.
CPC ...
H04N 5/374 (2013.01); H04N 5/23229 (2013.01);
Abstract

An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.


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