The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Mar. 03, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Zhibiao Zhou, Singapore, SG;
Shao-Hui Wu, Singapore, SG;
Chen-Bin Lin, Taipei, TW;
Ding-Lung Chen, Singapore, SG;
Chi-Fa Ku, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/426 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/426 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78606 (2013.01); H01L 29/78648 (2013.01);
Abstract
An oxide semiconductor device and a method for manufacturing the same are provided in the present invention. The oxide semiconductor device includes a back gate, an oxide semiconductor film, a pair of source and drain electrodes, agate insulating film, a gate electrode on the oxide semiconductor film with the gate insulating film therebetween, an insulating layer covering only over the gate electrode and the pair of source and drain electrodes, and a top blocking film over the insulating layer.