The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Jan. 08, 2018
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Po-Wen Su, Kaohsiung, TW;
Zhen Wu, Kaohsiung, TW;
Hsiao-Pang Chou, Taipei, TW;
Chiu-Hsien Yeh, Tainan, TW;
Shui-Yen Lu, Tainan, TW;
Jian-Wei Chen, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 21/82 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/512 (2013.01); H01L 21/82345 (2013.01); H01L 21/823462 (2013.01); H01L 27/088 (2013.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method of forming a semiconductor device includes the following steps. A substrate is provided, and the substrate has a first region. A barrier layer is then formed on the first region of the substrate. A first work function layer is formed on the barrier layer. An upper half portion of the first work function layer is converted into a non-volatile material layer. The non-volatile material layer is removed and a lower half portion of the first work function layer is kept.