The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Oct. 31, 2016
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Katsuhiro Uchimura, Kanagawa, JP;
Michimoto Kaminaga, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, unknown;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 29/40 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/26513 (2013.01); H01L 29/407 (2013.01); H01L 29/42368 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01);
Abstract
A semiconductor device with enhanced reliability in which a gate electrode for a trench-gate field effect transistor is formed through a gate insulating film in a trench made in a semiconductor substrate. The upper surface of the gate electrode is in a lower position than the upper surface of the semiconductor substrate in an area adjacent to the trench. A sidewall insulating film is formed over the gate electrode and over the sidewall of the trench. The gate electrode and the sidewall insulating film are covered by an insulating film as an interlayer insulating film.