The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Aug. 28, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/76224 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract
A semiconductor structure and method of forming the same. The semiconductor structure includes a fin structure formed on a substrate and an isolation structure formed therein. The isolation structure includes a trench with a concave upper sidewall, a straight lower sidewall and a rounded top corner. A first dielectric layer fills a lower portion of the trench. A second dielectric layer covers a top surface of the first dielectric layer, the concave upper sidewall and the rounded top corner of the trench.