The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

Mar. 20, 2017
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Kuniaki Sugiura, Seoul, KR;

Masahiko Hasunuma, Seoul, KR;

Masatoshi Yoshikawa, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 29/78 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01);
Abstract

According to one embodiment, a magnetic memory device includes a first insulating film provided on a semiconductor region, and having a portion located in a memory cell array area and thicker than a portion located in a peripheral circuit area, a plurality of conductive plugs located in the memory cell array area and provided in the first insulating film, stacked structures located in the memory cell array area, provided on the conductive plugs, and each having layers including a magnetic layer, and transistors located in the peripheral circuit area, and each including a gate electrode provided on the semiconductor region and covered with the first insulating film, wherein a thickness t0 from a main surface of the semiconductor region to a lower surface of each stacked structure is greater than a predetermined value.


Find Patent Forward Citations

Loading…